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TC1303B-BG3EUN Datasheet(数据表) 6 Page - Microchip Technology

部件型号  TC1303B-BG3EUN
说明  500 mA Synchronous Buck Regulator, 300 mA LDO with Power-Good Output
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
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 6 page
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TC1303B
DS21949A-page 6
© 2005 Microchip Technology Inc.
Wake-Up Time (From SHDN2
mode), (VOUT2)
tWK
31
100
µs
IOUT1 = IOUT2 = 50 mA
Settling Time (From SHDN2
mode), (VOUT2)
tS
100
µs
IOUT1 = IOUT2 = 50 mA
Power-Good
Voltage Range PG
VPG
1.0
1.2
—5.5
5.5
VTA = 0°C to +70°C
TA = -40°C to +85°C
VIN ≤ 2.7 ISINK = 100 µA
PG Threshold High
(VOUT1 or VOUT2)
VTH_H
—94
96
% of
VOUTX
On Rising VOUT1 or VOUT2
VOUTX =VOUT1 or VOUT2
PG Threshold Low
(VOUT1 or VOUT2)
VTH_L
89
92
% of
VOUTX
On Falling VOUT1 or VOUT2
VOUTX =VOUT1 or VOUT2
PG Threshold Hysteresis
(VOUT1 and VOUT2)
VTH_HYS
—2
% of
VOUTX
VOUTX =VOUT1 or VOUT2
PG Threshold Tempco
ΔVTH/ΔT
30
ppm/°C
PG Delay
tRPD
165
µs
VOUT1 or VOUT2 =(VTH + 100 mV)
to (VTH - 100 mV)
PG Active Time-out Period
tRPU
140
262
560
ms
VOUT1 or VOUT2 =VTH - 100 mV
to VTH + 100 mV,
ISINK = 1.2 mA
PG Output Voltage Low
PG_VOL
——
0.2
VVOUT1orVOUT2 =VTH -100 mV,
IPG= 1.2 mA VIN2 >2.7V
IPG = 100 µA, 1.0V < VIN2 < 2.7V
PG Output Voltage High
PG_VOH
0.9* VOUT2
——
V
VOUT1 or VOUT2 =VTH + 100 mV
VOUT2 ≥ 1.8V, IPG = - 500 µA
VOUT2 < 1.8V,IPG = - 300 µA
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: VIN1 =VIN2 = SHDN1,2 =3.6V, COUT1 =CIN = 4.7 µF, COUT2 =1µF, L =4.7 µH, VOUT1 (ADJ) = 1.8V,
IOUT1 = 100 ma, IOUT2 = 0.1 mA TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note
1:
The Minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VRX + VDROPOUT, VRX = VR1 or VR2.
2:
VRX is the regulator output voltage setting.
3:
TCVOUT2 = ((VOUT2max – VOUT2min) * 10
6)/(V
OUT2 * DT).
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5:
Dropout voltage is defined as the input to output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. TA, TJ, θJA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7:
The integrated MOSFET switches have an integral diode from the LX pin to VIN, and from LX to PGND. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8:
VIN1 and VIN2 are supplied by the same input source.




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