RJK6014DPP Datasheet(数据表) 1 Page - Renesas Technology Corp

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RJK6014DPP Datasheet(数据表) 1 Page - Renesas Technology Corp

部件型号	RJK6014DPP

说明	Silicon N Channel MOS FET High Speed Power Switching

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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REJ03G1531-0100 Rev.1.00 Apr 17, 2007

Page 1 of 3

RJK6014DPP

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1531-0100

Rev.1.00

Apr 17, 2007

Features

• Low on-resistance

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

1

2

3

D

S

G

1. Gate

2. Drain

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

600

V

Gate to source voltage

VGSS

±30

V

Drain current

ID

Note4

16

A

Drain peak current

ID (pulse)

Note1

32

A

Body-drain diode reverse drain current

IDR

16

A

Body-drain diode reverse drain peak current

IDR (pulse)

Note1

32

A

Avalanche current

IAP

Note3

4

A

Avalanche energy

EAR

Note3

0.87

mJ

Channel dissipation

Pch

Note2

35

W

Channel to case thermal impedance

θch-c

3.57

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

3. STch = 25

°C, Tch ≤ 150°C

4. Limited by maximum safe operation area

HTML 页

1 2 3 4

数据表下载

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