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GSS9980 数据表(PDF) 1 Page - GTM CORPORATION |
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GSS9980 数据表(HTML) 1 Page - GTM CORPORATION |
1 / 4 page GSS9980 Page: 1/4 ISSUED DATE :2005/11/16 REVISED DATE : G G S S S S 99998800 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features *High Breakdown Voltage *Low Gate Change *Single Drive Requirement Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.35 0.49 C 3.80 4.00 L 1.35 1.75 D 0° 8° J 0.375 REF. E 0.40 0.90 K 45° F 0.19 0.25 G 1.27 TYP. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3, VGS@10V ID @TA=25 : 4.6 A Continuous Drain Current3, VGS@10V ID @TA=70 : 2.9 A Pulsed Drain Current1 IDM 30 A Total Power Dissipation PD @TA=25 : 2 W Linear Derating Factor 0.016 W/ : Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-amb 62.5 : /W BVDSS 80V RDS(ON) 52m ID 4.6A Pb Free Plating Product |
类似零件编号 - GSS9980 |
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类似说明 - GSS9980 |
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