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GSS4226 数据表(PDF) 2 Page - GTM CORPORATION |
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GSS4226 数据表(HTML) 2 Page - GTM CORPORATION |
2 / 4 page GSS4226 Page: 2/4 ISSUED DATE :2005/04/21 REVISED DATE :2005/09/30 Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.03 - V/ : Reference to 25 : , ID=1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250Ua Forward Transconductance gfs - 15 - S VDS=10V, ID=6A Gate-Source Leakage Current IGSS - - D100 nA VGS= D20V Drain-Source Leakage Current(Tj=25 : ) - - 1 uA VDS=30V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - 25 uA VDS=24V, VGS=0 - - 18 VGS=10V, ID=6A Static Drain-Source On-Resistance2 RDS(ON) - - 28 m Ł VGS=4.5V, ID=4A Total Gate Charge2 Qg - 20 30 Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Change Qgd - 12 - nC ID=8A VDS=24V VGS=4.5V Turn-on Delay Time2 Td(on) - 12 - Rise Time Tr - 8 - Turn-off Delay Time Td(off) - 31 - Fall Time Tf - 12 - ns VDS=15V ID=1A VGS=10V RG=3.3 Ł RD=15 Ł Input Capacitance Ciss - 1450 2320 Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss - 230 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=1.7A, VGS=0V, Tj=25 : Reverse Recovery Time Trr - 27 - ns Reverse Recovery Charge Qrr - 18 - nC IS=8A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. : |
类似零件编号 - GSS4226 |
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类似说明 - GSS4226 |
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