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GS3018 数据表(PDF) 1 Page - GTM CORPORATION |
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GS3018 数据表(HTML) 1 Page - GTM CORPORATION |
1 / 4 page GS3018 Page: 1/4 ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C G G S S 33001188 N N -- C C H H A A N N N N E E L L M M O O S S F F E E T T Description N-channel enhancement-mode MOSFET Features &Low on-resistance. &Fast switching speed. &Low voltage drive (2.5V) makes this device ideal for portable equipment. &Easily designed drive circuits. &Easy to parallel. Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.8 1.10 L1 0.42 REF. A1 0 0.10 L 0.15 0.35 A2 0.8 1.00 b 0.25 0.40 D 1.80 2.20 c 0.10 0.25 E 1.15 1.35 e 0.65 REF. HE 1.80 2.40 Q1 0.15 BSC. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS f 20 V Continuous Drain Current3 ID @TA=25 : 115 mA Continuous Drain Current3 ID @TA=100 : 75 mA Pulsed Drain Current1,2 IDM 800 mA Power Dissipation PD @TA=25 : 0.225 W Linear Derating Factor 0.0018 W/ Operating Junction and Storage Temperature Range Tj, Tstg -40 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 556 /W BVDSS 30V RDS(ON) 8 ID 115mA Pb Free Plating Product |
类似零件编号 - GS3018 |
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类似说明 - GS3018 |
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