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GS3018 数据表(PDF) 2 Page - GTM CORPORATION |
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GS3018 数据表(HTML) 2 Page - GTM CORPORATION |
2 / 4 page GS3018 Page: 2/4 ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.8 - 2.0 V VDS=VGS, ID=0.1mA Forward Transconductance gfs 20 - - mS VDS=3V, ID=10mA Gate-Source Leakage Current IGSS - - ±1 uA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 uA VDS=30V, VGS=0 - 5 8 VGS=4V, ID=10mA Static Drain-Source On-Resistance RDS(ON) - 7 13 VGS=2.5V, ID=1mA Input Capacitance Ciss - - 50 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 pF VGS=0V VDS=5V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - 0.84 1.5 V IS=100mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. |
类似零件编号 - GS3018 |
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类似说明 - GS3018 |
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