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TDA8580 数据表(PDF) 7 Page - NXP Semiconductors |
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TDA8580 数据表(HTML) 7 Page - NXP Semiconductors |
7 / 20 page 1998 Feb 25 7 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 THERMAL CHARACTERISTICS CHARACTERISTICS VP = 14.4 V; Tamb =25 °C; fi = 1 kHz; RL = ∞; measured in test circuit of Fig.8; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 40 K/W Rth j-c thermal resistance from junction to case 1.5 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP operating supply voltage 8.0 14.4 28 V Iq(tot) total quiescent current − 120 140 mA Istb standby current − 150 µA VO DC output voltage VP = 14.4 V − 7.0 − V VP(mute) low supply voltage mute 6.0 7.0 8.0 V Vo single-ended and bridge-tied load output voltage VP = 14.4 V; ‘mute’ condition; RL =4 Ω −− 20 mV VI DC input voltage VP = 14.4 V − 4.0 − V STANDBY PIN (see Table 1) V5(stb) voltage at STANDBY pin for ‘standby’ condition 0 − 0.8 V Vhys(5)(stb) hysteresis voltage at STANDBY pin for ‘standby’ condition note 1 − 0.2 − V V5(mute) voltage at STANDBY pin for ‘mute’ condition V13 < 1 V 2.0 − 5.5 V V5(on) voltage at STANDBY pin for ‘on’ condition V13 <1V; VP > 9 V; note 2 8.0 − 18 V MUTE PIN (see Table 1) V13(mute) voltage at MUTE pin for ‘mute’ condition V5 =5V 0 − 1.0 V V13(on) voltage at MUTE pin for ‘on’ condition V5 =5V 3.5 − 5.5 V Diagnostic; output buffer (open-collector); see Figs 4, 5, 6 and 7 VOL low level output voltage Isink =1mA − 0.2 0.8 V ILI leakage current VDIAG = 14.4 V −− 1 µA CD clip detector VDIAG < 0.8 V tbf 2 tbf % Tj(diag) junction temperature for high temperature warning VDIAG < 0.8 V − 145 −°C |
类似零件编号 - TDA8580 |
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类似说明 - TDA8580 |
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