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IRF6635PBF Datasheet(数据表) 4 Page - International Rectifier

部件型号  IRF6635PBF
说明  DirectFET Power MOSFET
下载  9 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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IRF6635PBF Datasheet(HTML) 4 Page - International Rectifier

   
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IRF6635PbF
4
www.irf.com
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
≤60µs PULSE WIDTH
Tj = 25°C
2.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
ID = 32A
VGS = 4.5V
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
20
60
100
140
180
220
260
ID, Drain Current (A)
0
5
10
15
20
25
30
TJ = 25°C
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
1
2
3
4
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
≤60µs PULSE WIDTH




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