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TPD4E002 数据表(PDF) 2 Page - Texas Instruments |
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TPD4E002 数据表(HTML) 2 Page - Texas Instruments |
2 / 8 page www.ti.com Electrical Characteristics TYPICAL CHARACTERISTICS 8.0 –40 0 25 70 85 125 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Temperature (ºC) 9.0 1 2 3 4 5 6 7 8 9 10 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (Mhz) TPD4E002 QUAD LOW-CAPACITANCE ARRAY WITH ±15-kV ESD PROTECTION SLVS615B – JULY 2006 – REVISED MARCH 2007 T amb = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBR I/O Breakdown voltage IR = 1 mA 6.1 7.2 V IRM I/O Leakage current VRM = 3 V 0.1 µA αT Voltage temperature coefficient 45 10–4/ °C C I/O Capacitance per line 11 pF Rd Dynamic resistance(1) 2 Ω (1) Rd is measured under reverse breakdown condition with inrush current in the range 1Amps using pulse technique Figure 1. I/O Capacitance vs Temperature Figure 2. I/O Capacitance vs Frequency (Typical Values) 2 Submit Documentation Feedback |
类似零件编号 - TPD4E002 |
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类似说明 - TPD4E002 |
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