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ST2306 数据表(PDF) 2 Page - Stanson Technology |
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ST2306 数据表(HTML) 2 Page - Stanson Technology |
2 / 8 page N Channel Enhancement Mode MOSFET ST2306 3.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 3.5 2.5 A Pulsed Drain Current IDM 12 A Continuous Source Current (Diode Conduction) IS 1.25 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W Page 2 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 |
类似零件编号 - ST2306 |
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类似说明 - ST2306 |
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