STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
IRRM
TVJ=TVJM; VR=VRRM; VD=VDRM
70
mA
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
mA
IDRM
40
V
VT, VF
IT, IF=600A; TVJ=25
oC
1.50
VTO
For power-loss calculations only (TVJ=140
oC)
0.95
V
rT
1.0
m
VD=6V;
TVJ=25
oC
TVJ=-40
oC
VGT
2
3
V
VD=6V;
TVJ=25
oC
TVJ=-40
oC
IGT
150
200
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.25
V
IGD
10
mA
IH
TVJ=25
oC; VD=6V; RGK=
150
mA
TVJ=25
oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
300
mA
IL
per thyristor/diode; DC current
per module
RthJC
0.140
0.070
K/W
per thyristor/diode; DC current
per module
RthJK
0.180
0.090
K/W
dS
Creeping distance on surface
12.7
mm
dA
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
TVJ=25
oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
tgd
2
us
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
typ.
VR=100V; dv/dt=50V/us; VD=2/3VDRM
tq
200
us
uC
QS
TVJ=125
oC; IT, IF=400A; -di/dt=50A/us
760
IRM
275
A