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2SJ662 数据表(PDF) 1 Page - Sanyo Semicon Device

部件名 2SJ662
功能描述  General-Purpose Switching Device Applications
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

2SJ662 数据表(HTML) 1 Page - Sanyo Semicon Device

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2SJ662
No.8587-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--50
A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
--200
A
Allowable Power Dissipation
PD
1.65
W
Tc=25
°C75
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
435
mJ
Avalanche Current *2
IAV
--50
A
Note : *1 VDD=30V, L=200µH, IAV=--50A
*2 L
≤200µH, Single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--1
µA
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--25A
25
42
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--25A, VGS=--10V
20
26
m
RDS(on)2
ID=--25A, VGS=--4V
27
38
m
Marking : J662
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8587
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2005QA MS IM TB-00001985
2SJ662
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications


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