数据搜索系统,热门电子元器件搜索 |
|
N04L1630C2BT2 数据表(PDF) 5 Page - AMI SEMICONDUCTOR |
|
N04L1630C2BT2 数据表(HTML) 5 Page - AMI SEMICONDUCTOR |
5 / 12 page (DOC# 14-02-042 ReI I ECN# 01-1374 The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com. N04L1630C2B Advance Information AMI Semiconductor, Inc. Power Savings with Page Mode Operation (WE = VIH) Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A1-A4 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Page Address (A0, A5 - A17) LB, UB OE CE1 CE2 Word Address (A1 - A4) Open page Word 1 Word 2 Word 16 ... |
类似零件编号 - N04L1630C2BT2 |
|
类似说明 - N04L1630C2BT2 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |