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SI4416DY 数据表(PDF) 4 Page - NXP Semiconductors |
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SI4416DY 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 13 page Philips Semiconductors Si4416DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 05 June 2001 4 of 13 9397 750 08299 © Philips Electronics N.V. 2001. All rights reserved. 7. Thermal characteristics 7.1 Transient thermal impedance Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint; t ≤ 10 sec. Figure 4 50 K/W Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 03af19 10-2 10-1 1 10 102 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) Zth(j-a) (K/W) single pulse δ = 0.5 0.2 0.1 0.05 0.02 tp tp T P t T δ = |
类似零件编号 - SI4416DY |
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类似说明 - SI4416DY |
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