数据搜索系统,热门电子元器件搜索
Selected language     Chinese  ▼
部分名称
         详细搜索


IRF540NL Datasheet(数据表) 1 Page - International Rectifier

部件型号  IRF540NL
说明  HEXFET® Power MOSFET
下载  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 

 
 1 page
background image
IRF540NS
IRF540NL
HEXFET® Power MOSFET
07/01/05
www.irf.com
1
VDSS = 100V
RDS(on) = 44mΩ
ID = 33A
S
D
G
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
‡
33
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
‡
23
A
IDM
Pulsed Drain Current
‡
110
PD @TC = 25°C
Power Dissipation
130
W
Linear Derating Factor
0.87
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

16
A
EAR
Repetitive Avalanche Energy

13
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ‡
7.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
D2Pak
IRF540NS
TO-262
IRF540NL
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.15
RθJA
Junction-to-Ambient (PCB mount)**
–––
40
Thermal Resistance
°C/W
PD - 91342B




HTML 页

1  2  3  4  5  6  7  8  9  10 


数据表 下载



相关电子零件

部件型号部件说明Html View制造商
IRFBA1405PPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLL014HEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFBC40SPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF7F3704HEXFET® POWER MOSFET THRU-HOLE TO-39 20V N-CHANNEL 1 2 3 4 5 MoreInternational Rectifier
IRFI614GPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFIZ44GPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRL3103SPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFP240PBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF7379PBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

链接网址

ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl