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DCR03B 数据表(PDF) 1 Page - Dc Components |
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DCR03B 数据表(HTML) 1 Page - Dc Components |
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1 / 1 page DCR03B THRU DCR03F TO-92 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 200 to 600 Volts CURRENT - 0.3 Ampere Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 200 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors Pinning 1 = Gate, 2 = Anode, 3 = Cathode Dimensions in inches and (millimeters) .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27) Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 5oTyp 2oTyp 5oTyp 2oTyp 3 2 1 Characteristic Symbol Min Typ Max Unit Test Conditions Peak Repetitive Forward or Reverse TJ=25oC IDRM, IRRM - - 10 µA VAK=Rated VDRM or VRRM Off-State Blocking Current TJ=110oC - - 100 RGK=1K Ω Peak Forward On-State Voltage VTM - - 1.7 V ITM=0.3A Peak Continuous DC Gate Trigger Current IGT - - 200 µA VAK=7V DC, RL=100 Ω Continuous DC Gate Trigger Voltage VGT - - 0.8 V VAK=7V DC, RL=100 Ω DC Holding Current IH - - 5.0 mA RGK=1K Ω Critical Rate-of-Rise of Off-State Voltage dv/dt - 5.0 - V/ µS RGK=1K Ω Gate Controlled Turn-on Time(tD+tR) Tgt - 2.2 - µsec IGT=10mA Thermal Resistance, Junction to Case R θJC - 75 - o C/W - Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Rating Unit Peak Repetitive Off-State DCR03B VDRM, 200 Voltage and Reverse Voltage DCR03D VRRM 400 V DCR03F 600 On-State Average Current IT(AV) 0.3 A (TA=30oC, 180o Conduction Angles) On-State RMS Current IT(RMS) 0.47 A (TA=30oC, 180o Conduction Angles) Peak Non-repetitive Surge Current ITSM 8 A (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current IGM 0.1 A Forward Peak Gate Power Dissipation PGM 0.1 W Forward Average Gate Power Dissipation PG(AV) 0.01 W Operating Junction Temperature TJ -40 to +110 o C Storage Temperature TSTG -40 to +150 o C Absolute Maximum Ratings(TA=25oC) DC COMPONENTS CO., LTD. |
类似零件编号 - DCR03B |
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类似说明 - DCR03B |
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