数据搜索系统,热门电子元器件搜索 |
|
MCZ33989EGR2 数据表(PDF) 7 Page - Freescale Semiconductor, Inc |
|
MCZ33989EGR2 数据表(HTML) 7 Page - Freescale Semiconductor, Inc |
7 / 66 page Analog Integrated Circuit Device Data Freescale Semiconductor 7 33989 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS BATFAIL Flag Hysteresis (13) VBF(HYS) — 1.0 — V Battery Fall Early Warning Threshold In Normal and Standby Mode BFEW 5.3 5.8 6.3 V Battery Fall Early Warning Hysteresis In Normal and Standby Mode (13) BFEWH 0.1 0.2 0.3 V POWER OUTPUT (VDD1) (14) VDD1 Output Voltage IDD1 from 2.0 to 200 mA TAMB -40 to 125°C, 5.5 V < VSUP < 27 V VDD1OUT 4.9 5.0 5.1 V VDD1 Output Voltage IDD1 from 2.0 to 200 mA, 4.5 V < VSUP < 5.5 V VDD1OUT2 4.0 — — V Dropout Voltage IDD1 = 200 mA VDD1DRP — 0.2 0.5 V Dropout Voltage, Limited Output Current IDD1 = 50 mA, 4.5 V < VSUP VDD1DRP2 — 0.1 0.25 V IDD1 Output Current Internally Limited IDD1 200 285 350 mA Junction Thermal Shutdown Normal or Standby Modes TSD 160 — 200 °C Junction Over Temperature Pre-Warning VDDTEMP Bit Set TPW 125 — 160 °C Temperature Threshold Difference TSD - TPW 20 — 40 °C Reset Threshold 1 Selectable by SPI. Default Value After Reset. RSTTH1 4.5 4.6 4.7 V Reset Threshold 2 Selectable by SPI RSTTH2 4.1 4.2 4.3 V VDD1 Range for Reset Active VDDR 1.0 — — V Reset Delay Time Measured at 50% of Reset Signal tD 4.0 — 30 µs Line Regulation (C at VDD1 = 47 µF Tantal) 9.0 V VSUP < 18, IDD = 10 mA LR1 — 5.0 25 mV Line Regulation (C at VDD1 = 47 µF Tantal) 5.5 < VSUP < 27 V, IDD = 10 mA LR2 — 10 25 mV Load Regulation (C at VDD1 = 47 µF Tantal) 1.0 mA < IIDD < 200 mA LD — 25 75 mV Thermal Stability VSUP = 13.5 V, 1 = -100 mA Not Tested (15) THERMS — 30 50 mV Notes 13. With CAN cell in Sleep-Disable state. If CAN cell is Sleep-Enabled for wake-up, an additional 60 µA must be added to specified value. 14. IDD1 is the total regulator output current. VDD specification with external capacitor. Stability requirement: C > 47 µF ESR < 1.3 Ω (tantalum capacitor). In reset, normal request, normal and standby modes. Measure with C = 47 µF Tantalum. 15. Guaranteed by design; however, it is not production tested. Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 5.5 V ≤ V SUP ≤ 18 V, - 40°C ≤ T A ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
类似零件编号 - MCZ33989EGR2 |
|
类似说明 - MCZ33989EGR2 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |