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MC33976DWR2 数据表(PDF) 6 Page - Freescale Semiconductor, Inc |
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MC33976DWR2 数据表(HTML) 6 Page - Freescale Semiconductor, Inc |
6 / 41 page Analog Integrated Circuit Device Data 6 Freescale Semiconductor 33976 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS POWER OUTPUTS (CONTINUED) Full Step Active Output (Measured Across Coil Outputs) SIN0, 1, ± (COS0, 1, ±) (see Figure 9, page 26) Steps 1, 3 (0, 2) VFS 4.9 5.3 6.0 V Microstep, Full Step Output (Measured from Coil Low Side to Ground) SIN0, 1, ± (COS0, 1, ±), IOUT = 30 mA VLS 0 0.1 0.3 V Output Flyback Clamp (11) VFB – VST6 + 0.5 VST6+ 1.0 V Output Current Limit (Output = Vst6) ILIM 40 100 170 mA Overtemperature Shutdown (10) OTSD 155 – 180 °C Overtemperature Hysteresis (11) OTHYST 8.0 – 16 °C CONTROL I/O Input Logic High Voltage (12) VIH 2.0 – – V Input Logic Low Voltage (12) VIL – – 0.8 V Input Logic Voltage Hysteresis (10) VIN(HYST) – 100 – mV Input Logic Pull Down Current (SI, SCLK) IDWN 3.0 – 20 µA Input Logic Pull-Up Current (CS, RST) IUP 5.0 – 20 µA SO High-State Output Voltage (IOH = 1.0 mA) VSOH 0.8 VDD – – V SO Low-State Output Voltage (IOL = -1.6 mA) VSOL – 0.2 0.4 V SO Tri-State Leakage Current (CS ≥ 3.5 V) ISOLK -5.0 0 5.0 µA Input Capacitance (13) CIN – 4.0 12 pF SO Tri-State Capacitance (13) CSO – – 20 pF ANALOG TO DIGITAL CONVERTER (RTZ ACCUMULATOR COUNT) ADC Gain (10), (14) GADC 100 188 270 Counts/ V/ms Notes 10. This parameter is guaranteed by design, but it is not production tested. 11. Not 100 percent tested. 12. VDD = 5.0 V. 13. Capacitance not measured. This parameter is guaranteed by design, but it is not production tested. 14. Reference RTZ Accumulator (Typical) on page 23 Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 4.75 V ≤ V DD ≤ 5.25 V, - 40°C ≤ T J ≤ 150°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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