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NE334S01 数据表(PDF) 2 Page - NEC

部件名 NE334S01
功能描述  C BAND SUPER LOW NOISE HJ FET
Download  6 Pages
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制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC

NE334S01 数据表(HTML) 2 Page - NEC

  NE334S01_00 Datasheet HTML 1Page - NEC NE334S01_00 Datasheet HTML 2Page - NEC NE334S01_00 Datasheet HTML 3Page - NEC NE334S01_00 Datasheet HTML 4Page - NEC NE334S01_00 Datasheet HTML 5Page - NEC NE334S01_00 Datasheet HTML 6Page - NEC  
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FREQ.
NFMIN
GA
ΓOPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
2
0.23
17.0
0.77
15
0.19
4
0.25
16.0
0.58
43
0.18
6
0.28
14.7
0.43
82
0.13
8
0.31
13.6
0.32
127
0.08
10
0.38
12.5
0.27
175
0.07
12
0.48
11.5
0.27
-139
0.10
14
0.60
10.5
0.34
-100
0.17
16
0.73
9.6
0.48
-70
0.29
18
0.88
8.8
0.69
-56
0.46
SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Source Voltage
V
4.0
VGS
Gate to Source Voltage
V
-3.0
IDS
Drain Current
mA
IDSS
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-65 to +125
PT
Total Power Dissipation
mW
300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Note:
1. Operation in excess of any one of these conditions may result
in permanent damage.
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature, TA (
°C)
Drain to Source Voltage, VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Gate to Source Voltage, VGS (V)
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 2 V, IDS = 15 mA
NE334S01
500
400
300
200
100
0
50
100
150
200
250
VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
100
80
60
40
20
0
12
3
4
5
0
0.5
-0.5
-1.0
-2.0
2.0
1.0
0.4 dB
0.6 dB
Γopt
0.8 dB
VDS = 2 V
100
80
60
40
20
0
-2.0
-1.0
0
TYPICAL CONSTANT NOISE FIGURE
CIRCLE (VDS = 2 V, IDS = 15 mA, f = 4 GHz)


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