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PEMD3 数据表(PDF) 5 Page - NXP Semiconductors |
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PEMD3 数据表(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 2001 Nov 07 5 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 k Ω, R2 = 10 kΩ PEMD3 handbook, halfpage 103 10 102 1 MGW369 10−1 110 IC (mA) hFE 102 (1) (2) (3) Fig.3 DC current gain as a function of collector current; typical values. TR1 (NPN); VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 1 10−2 10−1 MGW368 110 IC (mA) VCEsat (V) 102 (1) (2) (3) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 10 10−1 1 MGW371 10−2 10−1 1 IC (mA) 10 Vi(off) (V) (1) (2) (3) Fig.5 Input-off voltage as a function of collector current; typical values. TR1 (NPN); VCE =5V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. handbook, halfpage 102 1 10 10−1 MGW370 10−1 110 IC (mA) 102 Vi(on) (V) (1) (2) (3) Fig.6 Input-on voltage as a function of collector current; typical values. TR1 (NPN); VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. |
类似零件编号 - PEMD3 |
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类似说明 - PEMD3 |
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