制造商 | 部件名 | 数据表 | 功能描述 |
NXP Semiconductors |
EF89
|
281Kb / 11P |
PENTODE WITH VARIABLE MUTUAL CONDUCTANCE FOR USE AS R.F. or I.F. AMPLIFIER
12.12.1955 |
4657
|
30Kb / 3P |
TRIODE FOR USE AS L.F. AMPLIFIER
28.8.1948 |
PC95
|
278Kb / 9P |
TRIODE WITH VARIABLE MUTUAL CONDUCTANCE AND LOW ANODE
3.3.1959 |
ECC40
|
173Kb / 8P |
DOUBLE TRIODE FOR USE AS L.F. AMPLIFIER
10.10.1953 |
QQE06
|
1Mb / 31P |
DOUBLE TETRODE FOR USE AS H.F. AMPLIFIER AND OSCILLATOR
3.3.1957 |
EF183
|
228Kb / 8P |
I.F. PENTODE
January 1970 |
EF50
|
41Kb / 3P |
PENTODE FOR USE AS WIDE BAND AND MEASURING AMPLIFIER
4.4.1953 |
UF42
|
148Kb / 5P |
R.F. PENTODE FOR USE AS WIDE-BAND AMPLIFIER
12.12.1950 |
EFF51
|
36Kb / 3P |
TWIN H.F. PENTODE FOR U.S.W. AMPLIFICATION
1.5.1948 |
5672
|
64Kb / 3P |
SUBMINIATURE PENTODE FOR USE AS A.F. POWER AMPLIFIER IN PORTABLE EQUIMENT
3.3.1957 |