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MGF0911A 数据表(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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MGF0911A 数据表(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 4 page MGF0911A MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 L, S BAND POWER GaAs FET ID vs. VDS DRAIN TO SOURCE VOLTAGE VDS(V) 0 2 5 0 4 8 VGS=-0.5V/Step Ta=25˚C TYPICAL CHARACTERISTICS ID vs. VGS GATE TO SOURCE VOLTAGE VGS(V) -3 -2 0 4 8 12 0 VDS=3V Ta=25˚C 1 3 4 12 -1 6 VGS=0V PO & ηadd vs. Pin (f=2.3GHz) INPUT POWER Pin(dBm) 0 35 25 25 35 VDS=10V ID=2.6A 45 50 40 30 20 10 ηadd 0 Gp=11 10 9 dB PO GLP,P1dB, ID and ηadd vs. VDS (f=2.3GHz) VDS(V) 6 39 8 20 10 ID=2.6A 13 ηadd P1dB 12 11 10 41 37 40 GLP 20 30 30 40 Mitsubishi Electric June/2004 |
类似零件编号 - MGF0911A_1 |
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类似说明 - MGF0911A_1 |
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