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NLAS4599 数据表(PDF) 4 Page - ON Semiconductor |
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NLAS4599 数据表(HTML) 4 Page - ON Semiconductor |
4 / 11 page NLAS4599 http://onsemi.com 4 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Symbol Parameter Test Conditions Guaranteed Max Limit Unit VCC VIS −55 to 25 5C <85 5C <125 5C (V) (V) Min Typ* Max Min Max Min Max tON Turn−On Time (Figures 12 and 13) RL = 300 W, CL = 35 pF (Figures 5 and 6) 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 5 5 2 2 23 16 11 9 28 21 16 14 5 5 2 2 30 25 20 20 5 5 2 2 30 25 20 20 ns tOFF Turn−Off Time (Figures 12 and 13) RL = 300 W, CL = 35 pF (Figures 5 and 6) 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1 1 1 1 7 5 4 3 12 10 9 8 1 1 1 1 15 15 12 12 1 1 1 1 15 15 12 12 ns tBBM Minimum Break−Before−Make Time VIS = 3.0 V (Figure 4) RL = 300 W, CL = 35 pF 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1 1 1 1 12 11 6 5 1 1 1 1 1 1 1 1 ns *Typical Characteristics are at 25 °C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8 10 10 20 pF ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition VCC (V) Typical Unit 25 °C BW Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response (Figure 10) VIN = 0 dBm VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 170 200 200 MHz VONL Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 −3 −3 −3 dB VISO Off−Channel Isolation (Figure 10) f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 −93 −93 −93 dB Q Charge Injection Select Input to Common I/O (Figure 15) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 W, CL = 1000 pF Q = CL * DVOUT (Figure 8) 3.0 5.5 1.5 3.0 pC THD Total Harmonic Distortion THD + Noise (Figure 14) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 W, CL = 50 pF VIS = 5.0 VPP sine wave 5.5 0.1 % |
类似零件编号 - NLAS4599 |
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类似说明 - NLAS4599 |
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