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SS8050 Datasheet(数据表) 1 Page - Fairchild Semiconductor

部件型号  SS8050
说明  2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

SS8050 Datasheet(HTML) 1 Page - Fairchild Semiconductor

  SS8050 数据表 HTML 1Page - Fairchild Semiconductor SS8050 数据表 HTML 2Page - Fairchild Semiconductor SS8050 数据表 HTML 3Page - Fairchild Semiconductor SS8050 数据表 HTML 4Page - Fairchild Semiconductor  
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©2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
Electrical Characteristics T
a=25°C unless otherwise noted
hFE Classification
Symbol
Parameter
Ratings
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
1.5
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=100µA, IE=0
40
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=2mA, IB=0
25
V
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
6
V
ICBO
Collector Cut-off Current
VCB=35V, IE=0
100
nA
IEBO
Emitter Cut-off Current
VEB=6V, IC=0
100
nA
hFE1
hFE2
hFE3
DC Current Gain
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
45
85
40
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC=800mA, IB=80mA
0.5
V
VBE (sat)
Base-Emitter Saturation Voltage
IC=800mA, IB=80mA
1.2
V
VBE (on)
Base-Emitter On Voltage
VCE=1V, IC=10mA
1
V
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
9.0
pF
fT
Current Gain Bandwidth Product
VCE=10V, IC=50mA
100
MHz
Classification
B
C
D
hFE2
85 ~ 160
120 ~ 200
160 ~ 300
SS8050
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)
1. Emitter 2. Base 3. Collector
TO-92
1




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