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IRF3709LPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF3709LPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 11 page www.irf.com 1 07/01/04 Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 90 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A IDM Pulsed Drain Current 360 PD @TC = 25°C Maximum Power Dissipation 120 W PD @TA = 25°C Maximum Power Dissipation 3.1 W Linear Derating Factor 0.96 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C IRF3709PbF IRF3709SPbF IRF3709LPBF SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 30V 9.0m Ω 90A Notes through are on page 11 Absolute Maximum Ratings D2Pak IRF3709S TO-220AB IRF3709 TO-262 IRF3709L Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.04 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB mount) ––– 40 Applications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l Lead-Free PD - 95495 |
类似零件编号 - IRF3709LPBF |
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类似说明 - IRF3709LPBF |
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