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FDS4435 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FDS4435 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDS4435 Rev F1(W) Typical Characteristics 0 10 20 30 40 50 0 1 2 3 -V DS , DRAIN TO SOURCE VOLTAGE (V) V GS = -10V -3.0V -3.5V -4.0V -4.5V V -6.0V 0.8 1 1.2 1.4 1.6 1.8 2 0 10 20 30 40 50 -I D , DRAIN CURRENT (A) V GS =-4.5V -5.0V -6.0V -7.0V -8.0V -10V -4.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 T J , JUNCTION TEMPERATURE ( oC) I D = -8.8A V GS = -10V 0.01 0.02 0.03 0.04 0.05 0.06 0.07 2 4 6 8 10 -V GS , GATE TO SOURCE VOLTAGE (V) I D = -4.4A T A = 125 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 1.5 2 2.5 3 3.5 4 -V GS , GATE TO SOURCE VOLTAGE (V) T A = -55 oC 25 oC 125oC V DS = -5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) V GS =0V T A = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
类似零件编号 - FDS4435 |
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类似说明 - FDS4435 |
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