FDD6632_04 datasheet(3/11 Pages) FAIRCHILD

部件名	FDD6632

功能描述	N-Channel Logic Level UltraFET짰 Trench Power MOSFET 30V, 9A, 70m?

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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FDD6632 Rev. B1

Typical Characteristics T

C = 25°C unless otherwise noted

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

TC, CASE TEMPERATURE (

oC)

0

255075

100

175

0.2

0.4

0.6

0.8

1.0

1.2

125

150

0

2

4

6

8

10

25

50

75

100

125

150

175

TC, CASE TEMPERATURE (

oC)

VGS = 10V

VGS = 4.5V

0.1

1

10-5

10-4

10-3

10-2

10-1

100

101

0.01

2

t, RECTANGULAR PULSE DURATION (s)

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

PDM

t1

t2

0.5

0.2

0.1

0.05

0.01

0.02

DUTY CYCLE - DESCENDING ORDER

SINGLE PULSE

10

100

7

t, PULSE WIDTH (s)

10-5

10-4

10-3

10-2

10-1

100

101

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

VGS = 5V

I = I25

175 - TC

150

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

TC = 25

oC

类似零件编号 - FDD6632_04

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDD6632	241Kb / 11P	N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90m?
Inchange Semiconductor ...	FDD6632	351Kb / 2P	isc N-Channel MOSFET Transistor

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类似说明 - FDD6632_04

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