August 2003

©2003 Fairchild Semiconductor Corporation

FDD6030L Rev E

FDD6030L

30V N-Channel PowerTrench

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that

has been especially tailored to minimize the on state

resistance and yet maintain low gate charge for

superior switching performance.

Applications

• DC/DC converter

• Motor Drives

Features

• 12 A, 30 V

Ω @ V

Ω @ V

• Low gate charge

• Fast Switching Speed

• High performance trench technology for extremely

G

S

D

TO-252

D-PAK

(TO-252)

S

G

D

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

(Note 3)

50

A

(Note 1a)

12

Pulsed

(Note 1a)

100

Power Dissipation

(Note 3)

56

(Note 1a)

3.2

(Note 1b)

1.5

W

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

2.7

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

45

(Note 1b)

96

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape width

Quantity

FDD6030L

FDD6030L

D-PAK (TO-252)

13’’

12mm

2500 units