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IRL5602SPBF 数据表(PDF) 1 Page - International Rectifier |
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IRL5602SPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.0 RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 IRL5602SPbF HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V -24 ID @ TC = 100°C Continuous Drain Current, VGS @ -4.5V -17 A IDM Pulsed Drain Current -96 PD @TC = 25°C Power Dissipation 75 W Linear Derating Factor 0.5 W/°C VGS Gate-to-Source Voltage ± 8.0 V EAS Single Pulse Avalanche Energy 290 mJ IAR Avalanche Current -12 A EAR Repetitive Avalanche Energy 7.5 mJ dv/dt Peak Diode Recovery dv/dt -0.81 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Thermal Resistance VDSS = -20V RDS(on) = 0.042Ω ID = -24A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated l Lead-Free Description 03/10/04 www.irf.com 1 S D G 2 D Pak °C/W PD- 95099 |
类似零件编号 - IRL5602SPBF |
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类似说明 - IRL5602SPBF |
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