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FDC6301N 数据表(PDF) 1 Page - Fairchild Semiconductor

部件名 FDC6301N
功能描述  Dual N-Channel , Digital FET
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

FDC6301N 数据表(HTML) 1 Page - Fairchild Semiconductor

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September 2001
FDC6301N
Dual N-Channel , Digital FET
General Description
Features
Absolute Maximum Ratings T
A = 25
oC unless other wise noted
Symbol
Parameter
FDC6301N
Units
V
DSS, VCC
Drain-Source Voltage, Power Supply Voltage
25
V
V
GSS, VIN
Gate-Source Voltage, V
IN
V
I
D, IOUT
Drain/Output Current
- Continuous
0.22
A
- Pulsed
0.5
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.9
W
0.7
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
140
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
FDC6301N Rev.D
25 V, 0.22 A continuous, 0.5 A Peak.
R
DS(ON) = 5 @ VGS= 2.7 V
R
DS(ON) = 4 @ VGS= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model.
These dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild 's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since bias
resistors are not required, these N-Channel FET's can replace
several digital transistors, with a variety of bias resistors.
D
S
G
IN
GND
Vcc
INVERTER APPLICATION
OUT
Mark: .301
1
5
4
2
3
6
SOT-23
SuperSOT
TM-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM-6
© 2001 Fairchild Semiconductor Corporation
- 0.5 to +8


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