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NE5517 数据表(PDF) 5 Page - NXP Semiconductors |
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NE5517 数据表(HTML) 5 Page - NXP Semiconductors |
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5 / 13 page  Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier 2002 Dec 06 5 DC ELECTRICAL CHARACTERISTICS1 SYMBOL PARAMETER TEST CONDITIONS AU5517/NE5517 NE5517A UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT 0.4 5 0.4 2 mV VOS Input offset voltage Over temperature range 5 mV IABC 5 µA 0.3 5 0.3 2 mV ∆VOS/∆T Avg. TC of input offset voltage 7 7 µV/°C VOS including diodes Diode bias current (ID) = 500 µA 0.5 5 0.5 2 mV VOS Input offset change 5 µA ≤ IABC ≤ 500 µA 0.1 0.1 3 mV IOS Input offset current 0.1 0.6 0.1 0.6 µA ∆IOS/∆T Avg. TC of input offset current 0.001 0.001 µA/°C IBIAS Input bias current 0.4 5 0.4 5 µA IBIAS In ut bias current Over temperature range 1 8 1 7 µA ∆IB/∆T Avg. TC of input current 0.01 0.01 µA/°C gM Forward transconductance 6700 9600 1300 7700 9600 1200 µmho gM Forward transconductance Over temperature range 5400 4000 µmho gM tracking 0.3 0.3 dB RL = 0, IABC =5 µA 5 3 5 7 µA IOUT Peak output current RL = 0, IABC = 500 µA 350 500 650 350 500 650 µA RL = 0 300 300 µA Peak output voltage VOUT Positive RL = ∞, 5 µA ≤ IABC ≤ 500 µA +12 +14.2 +12 +14.2 V Negative RL = ∞, 5 µA ≤ IABC ≤ 500 µA –12 –14.4 –12 –14.4 V ICC Supply current IABC = 500 µA, both channels 2.6 4 2.6 4 mA VOS sensitivity Positive ∆ VOS/∆ V+ 20 150 20 150 µV/V Negative ∆ VOS/∆ V– 20 150 20 150 µV/V CMRR Common-mode rejection ration 80 110 80 110 dB Common-mode range ±12 ±13.5 ±12 ±13.5 V Crosstalk Referred to input2 20 Hz < f < 20 kHz 100 100 dB IIN Differential input current IABC = 0, input = ±4 V 0.02 100 0.02 10 nA Leakage current IABC = 0 (Refer to test circuit) 0.2 100 0.2 5 nA RIN Input resistance 10 26 10 26 k Ω BW Open-loop bandwidth 2 2 MHz SR Slew rate Unity gain compensated 50 50 V/ µs INBUFFER Buffer input current 5 0.4 5 0.4 5 µA VOBUFFER Peak buffer output voltage 5 10 10 V ∆VBE of buffer Refer to Buffer VBE test circuit 3 0.5 5 0.5 5 mV NOTES: 1. These specifications apply for VS = ±15 V, Tamb = 25 °C, amplifier bias current (IABC) = 500 µA, Pins 2 and 15 open unless otherwise specified. The inputs to the buffers are grounded and outputs are open. 2. These specifications apply for VS = ±15 V, IABC = 500 µA, ROUT = 5 kΩ connected from the buffer output to –VS and the input of the buffer is connected to the transconductance amplifier output. 3. VS = ±15, ROUT = 5 kΩ connected from Buffer output to –VS and 5 µA ≤ IABC ≤ 500 µA. |
类似零件编号 - NE5517 |
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类似说明 - NE5517 |
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