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CFB0301_06 Datasheet(数据表) 1 Page - Mimix Broadband

部件型号  CFB0301
说明  High Dynamic Range Low Noise GaAs FET
下载  3 Pages
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制造商  MIMIX [Mimix Broadband]
网页  http://www.mimixbroadband.com
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CFB0301 Datasheet(HTML) 1 Page - Mimix Broadband

   
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High Dynamic Range
Low Noise GaAs FET
Page 1 of 3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CFB0301
August 2006 - Rev 03-Aug-06
Features
Low-Noise Figure from 0.8 to 2.0 GHz
High Gain
High Intercept Point
Highly Stable
Easily Matched to 50
70 mil Package
Applications
Cellular Base Stations
PCS Base Stations
Industrial Data Networks
Description
Celeritek’s CFB0301 is a high performance GaAs
MESFET with 600 µm gate width and 0.25 µm gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0301 is in an indus-
try-standard 70 mil package. It is surface mountable and
available in tape and reel.
Electrical Specifications (TA = 25°C, 2 GHz)
Standard
n
o
i
t
a
i
v
e
D
p
y
T
n
i
M
s
n
o
i
t
i
d
n
o
C
s
r
e
t
e
m
a
r
a
P
4
Max
Units
Vd = 2V, Id = 25 mA
Noise Figure 2
B
d
6
.
0
Associated Gain 2
B
d
6
1
e
r
u
g
i
F
e
s
i
o
N
@
Pout
1, 3
P-1
m
B
d
0
.
5
1
IP3
3
+5 dBm POUT
m
B
d
4
2
e
n
o
T
/
Id
3
@ P-1
A
m
5
3
Vd = 4V, Id = 30 mA
Noise Figure 2
B
d
7
.
0
Associated Gain 2
B
d
7
1
e
r
u
g
i
F
e
s
i
o
N
@
Pout
1, 3
P-1
m
B
d
5
.
0
2
IP3
3
+5 dBm POUT
m
B
d
0
3
e
n
o
T
/
Id
3
@ P-1
A
m
6
5
Vd = 4V, Id = 70 mA
Noise Figure 2
0.8
0.08
0.9
dB
Associated Gain 2
B
d
4
.
0
7
1
6
1
e
r
u
g
i
F
e
s
i
o
N
@
Pout
1, 3
P-1
20
21
0.4
dBm
IP3
3
+5 dBm POUT
m
B
d
9
.
0
4
3
2
3
e
n
o
T
/
Id
3
@ P-1
A
m
7
7
Transconductance
Vds = 2 V, Vgs
o
h
m
0
4
1
0
7
V
0
=
Saturated Drain Current
Vds = 2 V, Vgs
A
m
0
8
1
0
5
1
0
2
1
V
0
=
Pinchoff Voltages
Vds = 2 V, Ids
V
5
.
0
-
3
.
1
-
5
.
2
-
A
m
1
=
Thermal Resistance
@ Tcase
W
/
C
°
0
0
2
t
s
e
t
l
a
t
s
y
r
c
d
i
u
q
i
l
C
°
0
5
1
=
Notes: 1. @ T
case = 25°C. Derate 5 mW/°C for Tcase >25°C.
2. Input matched for low noise.
3. Matched for power transfer.
4. Standard deviation based on 10 wafers randomly selected
and is provided as an estimate of the distribution only.
Trademarks are the property of their respected owners.




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