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AM29F160D 数据表(PDF) 4 Page - SPANSION |
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AM29F160D 数据表(HTML) 4 Page - SPANSION |
4 / 47 page 2 Am29F160D Am29F160D_00_D6 November 2, 2006 D A TA SH EE T GENERAL DESCRIPTION The Am29F160D is a 16 Mbit, 5.0 Volt-only Flash memory device organized as 2,097,152 bytes or 1,048,576 words. Data appears on DQ0-DQ7 or DQ0- DQ15 depending on the data width selected. The device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access times of 70 and 90 ns, allowing high speed microprocessors to operate without wait states. The device is offered in a 48-pin TSOP package. To eliminate bus contention each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Com- mands are written to the command register using stan- dard microprocessor write timing. Register contents serve as inputs to an internal state-machine that con- trols the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facili- tates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automati- cally preprograms the array (if it is not already pro- grammed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, by reading the DQ7 (Data# Polling), or DQ6 (toggle) status bits. After a program or erase cycle is completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protec- tion feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Write Protect (WP#) feature protects the 16 Kbyte boot sector from erasure, by asserting a logic low on the WP# pin, whether or not the sector had been previously protected. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read boot-up firmware from the Flash memory device. The device offers a standby mode as a power-saving feature. Once the system places the device into the standby mode power consumption is greatly reduced. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The data is programmed using hot electron injection. |
类似零件编号 - AM29F160D |
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类似说明 - AM29F160D |
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