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AM49DL640BH70IS 数据表(PDF) 4 Page - SPANSION |
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AM49DL640BH70IS 数据表(HTML) 4 Page - SPANSION |
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4 / 63 page  2 Am49DL640BH December 5, 2003 ADV ANCE I N FO RMAT I O N GENERAL DESCRIPTION Am29DL640H Features The Am29DL640H is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 55, 70 or 85 ns and is offered in a 73-ball FBGA package. Standard control pins—chip enable (CE#f), write en- able (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power sup- ply for both read and write functions. Internally gener- ated and regulated voltages are provided for the program and erase operations. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks, two 8 Mb banks with small and large sectors, and two 24 Mb banks of large sectors only. Sector addresses are fixed, system software can be used to form user-defined bank groups. During an Erase/Program operation, any of the three non-busy banks may be read from. Note that only two banks can operate simultaneously. The device can im- prove overall system performance by allowing a host sy stem to progra m or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting fo r the completion o f progra m or erase operations. The Am29DL640H can be organized as both a top and bottom boot sector configuration. The SecSi™ (Secured Silicon) Sector is an extra 256 byte sector capable of being permanently locked by AMD or customers. The SecSi Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been customer locked, permanently set to 0 if the part has been factory locked, and is 0 if customer lockable. This way, customer lockable parts can never be used to re- place a factory locked part. Factory locked parts provide several options. The SecSi Sector may store a secure, random 16 byte ESN (Electronic Serial Number), customer code (pro- grammed through AMD’s ExpressFlash service), or both. Customer Lockable parts may utilize the SecSi Sector as bonus space, reading and writing like any other flash sector, or may permanently lock their own code there. DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of the simultaneous read/write product line by allowing removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, as opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs to state which piece of data is to be updated, and where the updated data is located in the system. This is an advantage compared to systems where user- written software must keep track of the old data loca- tion, status, logical to physical translation of the data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software does not need to interface with the Flash memory directly. In- stead, the user's software accesses the Flash memory by calling one of only six functions. AMD provides this software to simplify system design and software inte- gration efforts. The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. The host system can detect whether a program or erase operation is complete by using the device sta- tus bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/ DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to the read mode. The sector erase architecture allows memory sec- tors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write opera- tions during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of mem- ory. This can be achieved in-system or via program- ming equipment. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. Th e syste m can also place the device into th e standby mode. Power consumption is greatly re- duced in both modes. Bank Megabits Sector Sizes Bank 1 8 Mb Eight 8 Kbyte/4 Kword, Fifteen 64 Kbyte/32 Kword Bank 2 24 Mb Forty-eight 64 Kbyte/32 Kword Bank 3 24 Mb Forty-eight 64 Kbyte/32 Kword Bank 4 8 Mb Eight 8 Kbyte/4 Kword, Fifteen 64 Kbyte/32 Kword |
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