数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

AM29DL640H60EI 数据表(PDF) 10 Page - SPANSION

部件名 AM29DL640H60EI
功能描述  64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
Download  54 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SPANSION [SPANSION]
网页  http://www.spansion.com
标志 SPANSION - SPANSION

AM29DL640H60EI 数据表(HTML) 10 Page - SPANSION

Back Button AM29DL640H60EI Datasheet HTML 6Page - SPANSION AM29DL640H60EI Datasheet HTML 7Page - SPANSION AM29DL640H60EI Datasheet HTML 8Page - SPANSION AM29DL640H60EI Datasheet HTML 9Page - SPANSION AM29DL640H60EI Datasheet HTML 10Page - SPANSION AM29DL640H60EI Datasheet HTML 11Page - SPANSION AM29DL640H60EI Datasheet HTML 12Page - SPANSION AM29DL640H60EI Datasheet HTML 13Page - SPANSION AM29DL640H60EI Datasheet HTML 14Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 54 page
background image
8
Am29DL640H
June 7, 2005
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1.
Am29DL640H Device Bus Operations
Legend: L = Logic Low = V
IL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = Sector Address,
A
IN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A21:A0 in word mode (BYTE# = V
IH), A21:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
3. If WP#/ACC = V
IL, sectors 0, 1, 140, and 141 remain protected. If WP#/ACC = VIH, protection on sectors 0, 1, 140, and 141
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection
and Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word con-
figuration, DQ15–DQ0 are active and controlled by
CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ7–DQ0 are
active and controlled by CE# and OE#. The data I/O
pins DQ14–DQ8 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
IL. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at V
IH. The BYTE# pin deter mines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
Operation
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 2)
DQ15–DQ8
DQ7–
DQ0
BYTE#
= V
IH
BYTE#
= V
IL
Read
L
L
H
H
L/H
A
IN
D
OUT
DQ14–DQ8 =
High-Z, DQ15 = A-1
D
OUT
Write
L
H
L
H
(Note 3)
A
IN
D
IN
D
IN
Standby
V
CC ±
0.3 V
XX
V
CC ±
0.3 V
L/H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
L/H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
L/H
X
High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
VID
L/H
SA, A6 = L,
A1 = H, A0 = L
XX
DIN
Sector Unprotect (Note 2)
L
H
L
V
ID
(Note 3)
SA, A6 = H,
A1 = H, A0 = L
XX
D
IN
Temporary Sector
Unprotect
XX
X
V
ID
(Note 3)
A
IN
D
IN
High-Z
D
IN


类似零件编号 - AM29DL640H60EI

制造商部件名数据表功能描述
logo
Advanced Micro Devices
AM29DL640H60EI AMD-AM29DL640H60EI Datasheet
880Kb / 54P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640H60EIN AMD-AM29DL640H60EIN Datasheet
880Kb / 54P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
More results

类似说明 - AM29DL640H60EI

制造商部件名数据表功能描述
logo
Advanced Micro Devices
AM29DL640G AMD-AM29DL640G Datasheet
1Mb / 52P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
logo
SPANSION
S29JL064H SPANSION-S29JL064H Datasheet
1Mb / 64P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
logo
Advanced Micro Devices
AM29DL640H AMD-AM29DL640H Datasheet
880Kb / 54P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D AMD-AM29DL640D_05 Datasheet
1Mb / 54P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
logo
SPANSION
AM29DL640G SPANSION-AM29DL640G_05 Datasheet
1Mb / 56P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM75PDL191CHHA SPANSION-AM75PDL191CHHA Datasheet
2Mb / 129P
   128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM75PDL191CHH_0402 SPANSION-AM75PDL191CHH_0402 Datasheet
2Mb / 136P
   128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM75PDL191BHHA SPANSION-AM75PDL191BHHA Datasheet
1Mb / 129P
   128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
S29JL032H SPANSION-S29JL032H_09 Datasheet
1Mb / 61P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM49DL640BH SPANSION-AM49DL640BH Datasheet
1Mb / 63P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com