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BC847BVN-7 数据表(PDF) 2 Page - Diodes Incorporated |
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BC847BVN-7 数据表(HTML) 2 Page - Diodes Incorporated |
2 / 4 page DS30627 Rev. 4 - 2 2 of 4 BC847BVN www.diodes.com Electrical Characteristics NPN, BC847B Type (Q1) @ TA = 25°C unless otherwise specified Characteristic (Note 4) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 50 — — V IC = 10 µA, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 — — V IE = 1 µA, IC = 0 DC Current Gain hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage VBE(ON) 580 — 660 — 700 720 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA Collector-Cutoff Current ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz 1 10 100 1000 1.0 10 100 0.1 0.01 I , COLLECTOR CURRENT (mA) C Fig. 1, DC Current Gain vs Collector Current (BC847B Type) V = 5V CE 100 °C T = 25 °C A -50 °C 0 0.1 0.2 0.3 0.4 0.5 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Fig. 2, Collector-Emitter Saturation Voltage vs Collector Current (BC847B Type) I C I = 20 B T = 100 °C A T = 25 °C A T = -50 °C A 10 100 1000 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Fig. 3, Gain Bandwidth Product vs Collector Current (BC847B Type) T = 25 °C A V = 10V CE V =5V CE V = 2V CE 6 10 0 5 10 15 20 25 30 0 4 2 8 12 14 16 V , REVERSE VOLTAGE (V) R Fig. 4, Capacitance vs. Reverse Voltage (BC847B Type) Cobo Cibo f = 1MHz Note: 4. Short duration pulse test used to minimize self-heating effect. |
类似零件编号 - BC847BVN-7 |
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类似说明 - BC847BVN-7 |
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