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AM29LV065DU50WHIN 数据表(PDF) 11 Page - Advanced Micro Devices

部件名 AM29LV065DU50WHIN
功能描述  64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29LV065DU50WHIN 数据表(HTML) 11 Page - Advanced Micro Devices

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February 16, 2006
Am29LV065D
11
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1.
Am29LV065D Device Bus Operations
Legend: L = Logic Low = V
IL, H = Logic High = VIH, VID = 8.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address,
A
IN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A22:A0. Sector addresses are A22:A16.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group
Protection and Unprotection” section.
3. All sectors are unprotected when shipped from the factory (The SecSi Sector may be factory protected depending on version
ordered.)
4. D
IN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
VersatileIO
TM (V
IO) Control
The VersatileIO™ (V
IO) control allows the host system
to set the voltage levels that the device generates and
tolerates on CE# and DQ I/Os to the same voltage
level that is asserted on VIO. VIO is available in two
configurations (1.8–2.9 V and 3.0–5.0 V) for operation
in various system environments.
For example, a VI/O of 4.5–5.0 volts allows for I/O at
the 5 volt level, driving and receiving signals to and
from other 5 V devices on the same data bus.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
Operation
CE#
OE#
WE#
RESET#
ACC
Addresses
(Note 2)
DQ0–
DQ7
Read
L
L
H
H
X
A
IN
D
OUT
Write (Program/Erase)
L
H
L
H
X
A
IN
(Note 4)
Accelerated Program
L
H
L
H
V
HH
A
IN
(Note 4)
Standby
V
CC ±
0.3 V
XX
V
CC ±
0.3 V
H
X
High-Z
Output Disable
L
H
H
H
X
X
High-Z
Reset
X
X
X
L
X
X
High-Z
Sector Group Protect (Note 2)
L
H
L
V
ID
X
SA, A6 = L,
A1 = H, A0 = L
(Note 4)
Sector Group Unprotect
(Note 2)
LH
L
V
ID
X
SA, A6 = H,
A1 = H, A0 = L
(Note 4)
Temporary Sector Group
Unprotect
XX
X
V
ID
X
A
IN
(Note 4)


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