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AM29LV081B120EF 数据表(PDF) 9 Page - Advanced Micro Devices |
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AM29LV081B120EF 数据表(HTML) 9 Page - Advanced Micro Devices |
9 / 40 page 21525D6 October 12, 2006 Am29LV081B 7 D A TA SH EE T DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory loca- tion. The register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. The contents of the register serve as inputs to the internal state ma- chine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 1. Am29LV081B Device Bus Operations Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A19–A0. 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Protection/Unprotection” section. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output con- trol and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the mem- ory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that as- sert valid addresses on the device address inputs pro- duce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See “Reading Array Data” for more information. Refer to the AC Read Operations table for timing specifica- tions and to Figure 13 for the timing diagram. ICC1 in the DC Characteristics table represents the active cur- rent specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which in- cludes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facili- tate faster programming. Once the device enters the Un- lock Bypass mode, only two write cycles are required to program a byte, instead of four. The “Byte Program Command Sequence” section has details on program- ming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sec- tors, or the entire device. Table 2 indicate the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a sector. The “Command Definitions” section has de- tails on erasing a sector or the entire chip, or suspend- ing/resuming the erase operation. After the system writes the autoselect command se- quence, the device enters the autoselect mode. The system can then read autoselect codes from the inter- Operation CE# OE# WE# RESET# Addresses (Note 1) DQ0–DQ7 Read L L H H AIN DOUT Write L H L H AIN DIN Standby VCC ± 0.3 V X X VCC ± 0.3 V X High-Z Output Disable L H H H X High-Z Reset X X X L X High-Z Sector Protect (Note 2) L H L VID Sector Address, A6 = L, A1 = H, A0 = L X Sector Unprotect (Note 2) L H L VID Sector Address, A6 = H, A1 = H, A0 = L X Temporary Sector Unprotect X X X VID X X |
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