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AM29LV081B-70EF 数据表(PDF) 3 Page - Advanced Micro Devices |
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AM29LV081B-70EF 数据表(HTML) 3 Page - Advanced Micro Devices |
3 / 40 page DATA SHEET This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 21525 Rev: D Amendment: 6 Issue Date: October 12, 2006 Am29LV081B 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29LV081 device ■ High performance — Access times as fast as 70 ns ■ Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 7 mA read current — 15 mA program/erase current ■ Flexible sector architecture — Sixteen 64 Kbyte sectors — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write cycle guarantee per sector ■ 20-year data retention at 125°C — Reliable operation for the life of the system ■ Package option — 40-pin TSOP ■ Compatibility with JEDEC standards — Pinout and software compatible with single- power supply Flash — Superior inadvertent write protection ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data ■ Command sequence optimized for mass storage — Specific addresses not required for unlock cycles The Am29LV081B is not offered for new designs. Please contact a Spansion representative for alternates. |
类似零件编号 - AM29LV081B-70EF |
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类似说明 - AM29LV081B-70EF |
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