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LCE2009S 数据表(PDF) 5 Page - NXP Semiconductors |
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LCE2009S 数据表(HTML) 5 Page - NXP Semiconductors |
5 / 16 page 1997 Mar 03 5 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S; LCE2009S CHARACTERISTICS Tmb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current VCB = 20 V; IE =0 −− 0.1 µA ICBO collector cut-off current VCB = 40 V; IE =0 LBE2003S −− 150 µA LBE2009S; LCE2009S −− 250 µA ICER collector cut-off current LBE2003S VCB = 35 V; RBE = 220 Ω− − 500 µA LBE2009S; LCE2009S VCB = 35 V; RBE = 100 Ω− − 1000 µA IEBO emitter cut-off current VEB = 1.5 V; IC =0 LBE2003S −− 0.05 µA LBE2009S; LCE2009S −− 0.2 µA hFE DC current gain VCE =5V; IC =30mA 15 − 150 VCE =5V; IC = 110 mA 15 − 150 Ccb collector-base capacitance VCB = 18 V; VEB = 1.5 V; IE =IC = 0; f = 1 MHz LBE2003S − 0.3 − pF LBE2009S; LCE2009S − 0.6 − pF Cce collector-emitter capacitance VCE = 18 V; VEB = 1.5 V; IE =IC = 0; f = 1 MHz LBE2003S − 0.45 − pF LBE2009S; LCE2009S − 0.6 − pF Ceb emitter-base capacitance VCB = 10 V; VEB =1V; IE =IC = 0; f = 1 MHz LBE2003S − 1.7 − pF LBE2009S; LCE2009S − 3.3 − pF LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 |
类似零件编号 - LCE2009S |
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类似说明 - LCE2009S |
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