1N4003-T datasheet(1/3 Pages) DIODES

部件名	1N4003-T

功能描述	1.0A RECTIFIER

Download	3 Pages

Scroll/Zoom	100%

制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

标志

1 / 3 page

DS28002 Rev. 7 - 2

1 of 3

1N4001/L-1N4007/L

www.diodes.com

ã Diodes Incorporated

Features

1N4001/L - 1N4007/L

1.0A RECTIFIER

“L” Suffix Designates A-405 Package

No Suffix Designates DO-41 Package

A

B

C

D

Dim

DO-41 Plastic

A-405

Min

Max

Min

Max

A

25.40

¾

25.40

¾

B

4.06

5.21

4.10

5.20

C

0.71

0.864

0.53

0.64

D

2.00

2.72

2.00

2.70

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

·

Diffused Junction

·

High Current Capability and Low Forward Voltage Drop

·

Surge Overload Rating to 30A Peak

·

Low Reverse Leakage Current

·

Lead Free Finish, RoHS Compliant (Note 4)

Mechanical Data

·

Case: DO-41, A-405

·

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish - Bright Tin. Plated Leads Solderable per

MIL-STD-202, Method 208

·

Polarity: Cathode Band

·

Mounting Position: Any

·

Ordering Information: See Last Page

·

Marking: Type Number

·

Weight: DO-41 0.30 grams (approximate)

A-405 0.20 grams (approximate)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1N

4001/L

1N

4002/L

1N

4003/L

1N

4004/L

1N

4005/L

1N

4006/L

1N

4007/L

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50

100

200

400

600

800

1000

V

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

(Note 1)

@ TA = 75

°C

IO

1.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

30

A

Forward Voltage

@ IF = 1.0A

VFM

1.0

V

Peak Reverse Current

@ TA = 25

°C

at Rated DC Blocking Voltage

@ TA = 100

°C

IRM

5.0

50

mA

Typical Junction Capacitance (Note 2)

Cj

15

8

pF

Typical Thermal Resistance Junction to Ambient

RqJA

100

K/W

Maximum DC Blocking Voltage Temperature

TA

+150

°C

Operating and Storage Temperature Range (Note 3)

Tj, TSTG

-65 to +150

°C

Notes:

1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1. MHz and applied reverse voltage of 4.0V DC.

3. JEDEC Value.

4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

EU Directive Annex Notes 5 and 7.

SPICE MODELS: 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007

类似零件编号 - 1N4003-T

制造商	部件名	数据表	功能描述
Won-Top Electronics	1N4003-T3	52Kb / 3P	1.0A SILICON RECTIFIER
	1N4003-T3	61Kb / 4P	1.0A STANDARD DIODE
	1N4003-TB	52Kb / 3P	1.0A SILICON RECTIFIER
	1N4003-TB	61Kb / 4P	1.0A STANDARD DIODE
Micro Commercial Compon...	1N4003-TP	226Kb / 4P	1 Amp Rectifier 50 - 1000 Volts

More results

类似说明 - 1N4003-T

制造商	部件名	数据表	功能描述
Diodes Incorporated	1N4001	59Kb / 2P	1.0A RECTIFIER DS28002 Rev. E-2
	1N4001	55Kb / 3P	1.0A RECTIFIER
	1N4001	55Kb / 3P	1.0A RECTIFIER DS28002 Rev. 8 - 2
Vishay Siliconix	1N400X	28Kb / 2P	1.0A RECTIFIER Rev. E-2
Sanyo Semicon Device	DSM10	47Kb / 2P	1.0A Power Rectifier
Sanyo Semicon Device	SB10-04A3	65Kb / 3P	40V, 1.0A Rectifier
Zibo Seno Electronic En...	KBP101G	338Kb / 2P	1.0A BRIDGE RECTIFIER
	1N4001	116Kb / 2P	1.0A SILICON RECTIFIER
	ER101	136Kb / 2P	1.0A SUPERFAST RECTIFIER
Sanyo Semicon Device	DSK10	31Kb / 2P	1.0A Power Rectifier