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IRF830 数据表(PDF) 6 Page - NXP Semiconductors |
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IRF830 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 7 page Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy rated MECHANICAL DATA Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g) Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to mounting instructions for SOT78 (TO220AB) package. 3. Epoxy meets UL94 V0 at 1/8". REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT78 TO-220 D D1 q P L 12 3 L2 (1) b1 e e b 0 5 10 mm scale Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78 DIMENSIONS (mm are the original dimensions) A E A1 c Note 1. Terminals in this zone are not tinned. Q L1 UNIT A1 b1 D1 e P mm 2.54 qQ A b D c L2 (1) max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 L1 E L 97-06-11 March 1999 6 Rev 1.000 |
类似零件编号 - IRF830 |
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类似说明 - IRF830 |
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