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IRF830 数据表(PDF) 6 Page - NXP Semiconductors

部件名 IRF830
功能描述  PowerMOS transistor Avalanche energy rated
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

IRF830 数据表(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
IRF830
Avalanche energy rated
MECHANICAL DATA
Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
TO-220
D
D1
q
P
L
12
3
L2
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L1
UNIT
A1
b1
D1
e
P
mm
2.54
qQ
A
b
D
c
L2
(1)
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
E
L
97-06-11
March 1999
6
Rev 1.000


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