Product Description

1

EDS-103162 Rev C

303 Technology Court, Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.

Copyright 2006 Sirenza Microdevices, Inc. All worldwide rights reserved.

0

5

10

15

20

25

30

35

40

02

4

6

8

10

5V 40mA

3V 20mA

SPF-3143Z

Low Noise pHEMT GaAs FET

Product Features

•

Available in Lead free, RoHS compliant, & Green

packaging

•

DC-3.5 GHz Operation

•

0.58 dB NF

•

21 dB G

•

+31 dBm OIP3 (5V,40mA)

•

+17.7 dBm P1dB (5V,40mA)

•

Low Current, Low Cost

•

Apps circuits available for key bands

Applications

•

Analog and Digital Wireless Systems

•

3G, Cellular, PCS

•

Fixed Wireless, Pager Systems

•

Driver Stage for Low Power Applications

Sirenza Microdevices’ SPF-3143Z is a high performance 0.5

μm pHEMT

Gallium Arsenide FET. This 600

μm device is ideally biased at 3V, 20mA

for lowest noise performance and battery powered requirements. At

5V, 40mA the device can deliver OIP3 of 32.5 dBm. It provides ideal

performance as a driver stage in many commercial and industrial LNA

applications.

The matte tin finish on Sirenza’s lead-free package utilizes a post annealing

process to mitigate tin whisker formation and is RoHS compliant per EU

Directive 2002/95. This package is also manufactured with green molding

compounds that contain no antimony trioxide nor halogenated fire retardants.

Typical Gain Performance

Frequency (GHz)

Gmax

Gain

Pb

RoHS Compliant

&

Package

Green

Symbol

Parameters

Test Conditions

(unless otherwise noted)

Units

Test Frequency

(GHz)

Min.

Typ.

Max.

0.9

23.3

1.9

19.9

0.9

0.36

1.9

0.58

Insertion Gain

dB

0.9

18.2

19.7

21.2

NF

Noise Figure

Application Circuit

dB

1.9

0.8

1.0

Gain

Gain

Application Circuit

dB

1.9

14.1

15.6

17.1

Output Third Order Intercept Point

Application Circuit,

Tone Spacing = 1MHz,

Pout per tone = 0 dBm

dBm

1.9

30.5

32.5

Output Power at 1dB Compression

Application Circuit

1.9

19.0

20.5

Pinchoff Voltage

V

-1.4

-1.0

-0.6

Saturated Drain Current

mA

180

Transconductance

mS

210

BVGSO

Gate-Source Breakdown Voltage

V

-10

-7

BVGDO

Gate-Drain Breakdown Voltage

V-12

-7

Device Operating Voltage

drain-source

V

5.5

Device Operating Current

drain-source

mA

38

40

42

Thermal Resistance (junction - lead)

junction to lead

°C/W

200

dB

Maximum Available Gain

dB

Minimum Noise Figure