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SPF-3043 Datasheet(数据表) 2 Page - SIRENZA MICRODEVICES

部件型号  SPF-3043
说明  Low Noise pHEMT GaAs FET
下载  4 Pages
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制造商  SIRENZA [SIRENZA MICRODEVICES]
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SPF-3043 Datasheet(HTML) 2 Page - SIRENZA MICRODEVICES

   
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SPF-3043 Low Noise pHEMT GaAs FET
2
EDS-101772 Rev D
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
Preliminary
Pending Obsolescence
Absolute Maximum Ratings
Typical Performance - Engineering Application Circuits (See App Note AN-043)
Refer to the application note for additional RF data, PCB layouts, BOMs, biasing instructions, and other key
issues to be considered. For the latest application note please visit our site at www.sirenza.com.
[3]
P
OUT= 0 dBm per tone, 1MHz tone spacing
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[6]
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Note: Optimum NF, P1dB, and OIP3 performance cannot be achieved simultaneously.
Peak RF Performance Under Optimum Matching Conditions
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Biasing Details
The SPF-3043 is a depletion mode FET and requires a
negative gate voltage to achieve pinchoff. As such, power
supply sequencing circuitry is strongly recommended to
prevent damaging bias transients during turn-on. Active
bias circuitry is also recommended to maintain a constant
drain current from part-to-part.
Junction Temperature Calculation
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF consid-
erations the device operating conditions should also
satisfy the following expression:
P
DC < (TJ - TL) / RTH
where:
P
DC = IDS * VDS (W)
T
J = Junction Temperature (C)
T
L = Lead Temperature (pin 2) (C)
R
TH = Thermal Resistance (C/W)
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