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SPF-2086TK Datasheet(数据表) 1 Page - SIRENZA MICRODEVICES

部件型号  SPF-2086TK
说明  Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation
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制造商  SIRENZA [SIRENZA MICRODEVICES]
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SPF-2086TK Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES

   
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1
EDS-101225 Rev. D
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
http://www.sirenza.com
Phone: (800) SMI-MMIC
303 S. Technology Court, Broomfield, CO 80021
0
5
10
15
20
25
30
35
02468
10
12
3v, 20mA
5v, 40mA
Frequency (GHz)
Typical Gain Performance
Sirenza Microdevices’ SPF-2086TK is a high performance
0.25
µm pHEMT Gallium Arsenide FET with Schottky barrier
gates. This 300
µm device is ideally biased at 3V,20mA for lowest
noise performance and battery powered requirements. At
5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
Product Description
Gmax
Gain
SPF-2086TK
Low Noise pHEMT GaAs FET
0.1 - 6 GHz Operation
Product Features
22 dB Gmax at 1.9 GHz
0.4 dB F
MIN at 1.9 GHz
+32 dBm Output IP3
+20 dBm Output Power at 1dB Compression
Applications
LNA for Analog and Digital Wireless Systems
3G, Cellular, PCS
Fixed Wireless, Pager Systems
Driver Stage for low power applications
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