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SFR9210F 数据表(PDF) 3 Page - Fairchild Semiconductor |
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SFR9210F 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page P-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current SFR/U9210 10 -1 10 0 10 1 10 -1 10 0 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : - 15 V - 10V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V -V DS , Drain-Source Voltage [V] 2 4 6 8 10 10 -1 10 0 25 oC 150 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = -40 V 3. 250 µs Pulse Test -V GS , Gate-Source Voltage [V] 0 1 2 3 4 5 6 7 0 2 4 6 8 10 @ Note : T J = 25 oC V GS = -20 V V GS = -10 V -I D , Drain Current [A] 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 150 oC 25 oC @ Notes : 1. V GS = 0 V 2. 250 µs Pulse Test -V SD , Source-Drain Voltage [V] 0 2 4 6 8 10 0 5 10 V DS = -160 V V DS = -100 V V DS = -40 V @ Notes : I D =-1.75 A Q G , Total Gate Charge [nC] 10 0 10 1 0 100 200 300 400 C iss = C gs + C gd ( C ds = shorted ) C oss = C ds + C gd C rss = C gd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss -V DS , Drain-Source Voltage [V] ©1999 Fairchild Semiconductor Corporation |
类似零件编号 - SFR9210F |
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类似说明 - SFR9210F |
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