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CEM3138 Datasheet(数据表) 1 Page - Chino-Excel Technology

部件型号  CEM3138
说明  Dual N-Channel Enhancement Mode Field Effect Transistor
下载  7 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEM3138 Datasheet(HTML) 1 Page - Chino-Excel Technology

   
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Dual N-Channel Enhancement Mode Field Effect Transistor
CEM3138
FEATURES
30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V.
RDS(ON) = 21mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Channel 1
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation
VDS
VGS
ID
PD
IDM
30
2.0
36.4
9.1
±20
V
W
A
A
V
1
SO-8
1
D1
D1
D2
D2
S1
G1
S2
G2
8
7
6
5
1
2
3
4
Lead free product is acquired.
http://www.cetsemi.com
5
Channel 2
30
±20
30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V.
RDS(ON) = 35mΩ @VGS = 4.5V.
27.6
6.9
Details are subject to change without notice .
Rev 2. 2006.Nov
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient b
Parameter
Symbol
Limit
Units
C/W
62.5
RθJA




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