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CEM3138 Datasheet(数据表) 4 Page - Chino-Excel Technology

部件型号  CEM3138
说明  Dual N-Channel Enhancement Mode Field Effect Transistor
下载  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEM3138 Datasheet(HTML) 4 Page - Chino-Excel Technology

   
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CEM3138
4
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VGS=10V
ID=8.6A
-100
-50
0
50
100
150
200
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
-50 -25 0 25 50 75 100 125 150
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
0.4
0.6
0.8
1.0
10
0
10
-1
10
1
1.4
1.2
VGS=0V
CHANNEL 1
5
25
20
15
10
5
0
0.0
1.0
2.0
3.0
1.5
2.5
0.5
TJ=125 C
25 C
-55 C
50
40
30
20
10
0
0.0
0.5
1.0
2.0
1.5
2.5
VGS=3.0V
VGS=3.5V
VGS=4.0V
VGS=10,6,5,4.5V
Ciss
Coss
Crss
2400
2000
1600
1200
800
400
0
0
5
10
15
20
25




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