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CEM3138 Datasheet(数据表) 3 Page - Chino-Excel Technology

部件型号  CEM3138
说明  Dual N-Channel Enhancement Mode Field Effect Transistor
下载  7 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEM3138 Datasheet(HTML) 3 Page - Chino-Excel Technology

   
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CEM3138
N-Channel(Q2) Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forward Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
26
20
1
3
-100
100
1
mΩ
V
nA
nA
µ
A
V
S
3
Gate Body Leakage Current, Reverse
On Characteristics c
Dynamic Characteristics d
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-Off Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
Test Condition
VGS = 0V, ID = 250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ
Max
30
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.3A
VGS = 4.5V, ID = 5.6A
VDS = 5V, ID = 6.3A
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
VDS = 15V, ID = 12A,
VGS = 5V
VDS = 15V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = 1.3A
862
464
146
15
11
30
16
30
25
60
32
12.7
3.7
4.1
16.5
1.3
1.2
13
35
27
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.




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