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CEM3128 Datasheet(数据表) 3 Page - Chino-Excel Technology

部件型号  CEM3128
说明  Dual N-Channel Enhancement Mode Field Effect Transistor
下载  4 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEM3128 Datasheet(HTML) 3 Page - Chino-Excel Technology

   
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CEM3128
3
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS=VGS
I
D=250µA
-50
-25
0
25
50
75
100
125
150
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
10
0
10
-1
10
1
0.4
0.6
0.8
1.0
1.4
1.2
V
GS=0V
20
1
2
4
5
0
6
16
12
8
4
0
T
J=125 C
-55 C
25 C
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
GS=10V
I
D=9A
-100
-50
0
50
100
150
200
Ciss
Coss
Crss
1050
1260
840
630
420
210
0
0
5
10
15
20
25
35
28
21
14
7
0
0
1
2
4
3
V
GS=10,8,6V
V
GS=3V
V
GS=4V




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